MemrisTec Model Overview

Models of the First Phase 2021-2024

BioMCross 2022

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor
Richard Schroedter; Ahmet Samil Demirkol; Alon Ascoli; Ronald Tetzlaff; Eter Mgeladze; Melanie Herzig; Stefan Slesazeck; Thomas Mikolajick
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST), 08-10 June 2022, Bremen, Germany
DOI:10.1109/MOCAST54814.2022.9837726

MEMMEA

Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances
Rana Walied Ahmad; Dirk Wouters; Christopher Bengel; Rainer Waser; Stephan Menzel
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA
DOI: 10.1109/ISCAS48785.2022.9937570

A Versatile Memristor Model With Nonlinear Dopant Kinetics
Themistoklis Prodromakis; Boon Pin Peh; Christos Papavassiliou; Christofer Toumazou
IEEE Transactions on Electron Devices, vol. 58, no. 9, pp. 3099-3105, Sept. 2011
DOI: 10.1109/TED.2011.2158004

MemTDE

Review on Resistive Switching Devices Based on Multiferroic BiFeO3
Xianyue Zhao; Stephan Menzel; Ilia Polian; Heidemarie Schmidt; Nan Du
Nanomaterials. 2023; 13(8):1325
DOI: 10.3390/nano13081325

JART TUD (Mem²CNN)

A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation
Vasileios Ntinas; Dharmik Patel; Yongmin Wang; Ioannis Messaris; Dr. Vikas Rana; Stephan Menzel; Alon Ascoli; Ronald Tetzlaff
no link available yet, see SMACD Best Paper Award 2023

IHP RRAM-MLL (MIMEC)

Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs
Tommaso Rizzi; Andrea Baroni; Artem Glukhov; Davide Bertozzi; Christian Wenger; Daniele Ielmini; Cristian Zambelli
2022 IEEE International Integrated Reliability Workshop (IIRW), 09-14 October 2022, South Lake Tahoe, CA, USA
DOI: 10.1109/IIRW56459.2022.10032753

Previously developed models from literature

JART VCM

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
F. Cüppers; S. Menzel; C. Bengel; A. Hardtdegen; M. von Witzleben; U. Böttger; R. Waser; S. Hoffmann-Eifert
APL Materials; 7 (9): 091105; September 2019
DOI:10.1063/1.5108654

JART ECM

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems
M. Lübben; S. Menzel; S. G. Park; M. Yang; R. Waser; I. Valov
Nanotechnology 28 135205, 2017
DOI: 10.1088/1361-6528/aa5e59

Messaris 2017

A Data-Driven Verilog-A ReRAM Model
Ioannis Messaris; Alexander Serb; Spyros Stathopoulos; Ali Khiat; Spyridon Nikolaidis; Themistoklis Prodromakis
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 37, no. 12, pp. 3151-3162, Dec. 2018
DOI: 10.1109/TCAD.2018.2791468

Dataset for A computationally efficient Verilog-A ReRAM model (v.2)
Alexantrou Serb; Themistoklis Prodromakis; Ioannis Messaris
University of Southampton
DOI: 10.5258/SOTON/D0132

Aguirre 2022

SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices
Fernando Leonel Aguirre; Jordi Suñé; Enrique Miranda
Micromachines 2022, 13(2), 330
DOI: 10.3390/mi13020330

Picketts and Simmons

Switching dynamics in titanium dioxide memristive devices
Matthew D. Pickett; Dmitri B. Strukov; Julien L. Borghetti; J. Joshua Yang; Gregory S. Snider; Duncan R. Stewart; R. Stanley Williams
Journal of Applied Physics 106, 074508 (2009)
DOI: 10.1063/1.3236506

VTEAM

VTEAM: A General Model for Voltage-Controlled Memristors
Shahar Kvatinsky; Misbah Ramadan; Eby G. Friedman; Avinoam Kolodny
IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 62, no. 8, pp. 786-790, Aug. 2015
DOI: 10.1109/TCSII.2015.2433536

Biolek

SPICE Model of Memristor with Nonlinear Dopant Drift
Z. Biolek, D. Biolek, V. Biolkova
Radioengineering Vol. 18, no. 2, pp. 210 – 214 , Jun 2009
URL: https://doaj.org/article/960ed57738194a4aa5da6ac7d2a3c37a

Joglekar

The elusive memristor: properties of basic electrical circuits
Yogesh N. Joglekar; Stephen J. Wolf
European Journal of Physics, Volume 30, Number 4, 2009
DOI: 10.1088/0143-0807/30/4/001

Stanford PKU

A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification
Zizhen Jiang; Yi Wu; Shimeng Yu; Lin Yang; Kay Song; Zia Karim; H.-S. Philip Wong
IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1884-1892, May 2016
DOI: 10.1109/TED.2016.2545412

Yakopcic

Generalized Memristive Device SPICE Model and its Application in Circuit Design
Chris Yakopcic; Tarek M. Taha; Guru Subramanyam; Robinson E. Pino
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 32, no. 8, pp. 1201-1214, Aug. 2013
DOI: 10.1109/TCAD.2013.2252057

Linear Ion Drift

The missing memristor found
Dmitri B. Strukov; Gregory S. Snider; Duncan R. Stewart; R. Stanley Williams
Nature 453, 80–83 (2008).
DOI: 10.1038/nature06932

Prodromakis

A Versatile Memristor Model With Nonlinear Dopant Kinetics
Themistoklis Prodromakis; Boon Pin Peh; Christos Papavassiliou; Christofer Toumazou
IEEE Transactions on Electron Devices, vol. 58, no. 9, pp. 3099-3105, Sept. 2011
DOI: 10.1109/TED.2011.2158004