MIMEC

Memristive In-Memory-Computing: Radiation hard Memory for Computing in Space

Partner

Prof. Dietmar Fey

Nr.: FE 412/11-1

Department Informatik, Universität Erlangen

Prof. Amelie Hagelauer

Nr.: HA 7772/3-1

Lehrst. f. Mikro- und Nanosystemtechnik, Technische Universität München

Dr.-Ing. Marc Reichenbach

Nr.: RE 4182/2-1

Fachbereich Technische Informatik, Brandenburgisch-Technische Universität, Cottbus-Senftenberg

Portrait of Christian Wenger

Prof. Christian Wenger

Nr.: WE 3594/19-1

IHP GmbH, Frankfurt/Oder

Outcome

Comparative Analysis and Optimization of the SystemC-AMS Analog Simulation Efficiency of Resistive Crossbar Arrays

T. Rizzi, E. Pérez-Bosch Quesada, Ch. Wenger, C. Zambelli, D. Bertozzi

36th Conference on Design of Circuits and Integrated Systems (DCIS 2021), Vila do Conde, November 24 - 26, 2021, Portugal

DOI: 10.1109/DCIS53048.2021.9666193

Mitigating the Effects of RRAM Process Variation on the Accuracy of Artifical Neural Networks

Fritscher, J. Knödtel, M. Mallah, S. Pechmann, E. Perez-Bosch Quesada, T. Rizzi, Ch. Wenger, M. Reichenbach

21st International Conference on Embedded Computer Systems: Architectures, Modeling and Simulation (SAMOS 2021), Pythagorion, July 04 - 08, 2021, Greece

Brain-based Inspiration: Towards Neuromorphic Computing with Memristive Devices

Ch. Wenger, M.K. Mahadevaiah, T. Rizzi, E. Perez-Bosch Quesada, E. Perez

10th International IEEE/EMBS Conference on Neural Engineering (NER 2021), online, May 04 - 06, 2021, Germany

Project Description

Microelectronic circuits used in space applications have to be resilient against radiation effects. The concept Internet-of-Space (IoS) will support the internet access in rural regions. In order to realize this concept, it is crucial to place radiation-hard electronic chips into the orbit, where they have to work reliable.

Memristive memory devices are suited for such tasks because these electrical switching properties are based on ions instead of electrons. Besides their resilient properties in terms of radiation hardness, RRAMs are also non-volatile memories (NVM). To achieve the highest reliability of the used CMOS electronics in space or other terrestrial radiation contaminated environments, it is recommendable to store the content of the complete computing system in a timely periodic secure back-up store. For this kind of back-up system RRAMs are helpful due to their radiation hardness and the non-volatility of the data stored inside the memory cells in case of a power failure. Non-volatile memory processors, consisting of RRAMs are attractive for IoS applications.

In this project, we want to go a step ahead and move some of the processing load to the RRAM memory in the sense of an in-memory computing concept. The in-memory operations will be carried out in the rad-hard sense amplifiers of a RRAM array by signal evaluation and direct integration of memristive RRAM cells in the processing step. To verify the functionality of the radiation-hard system architecture, we are targeting intensive simulation work. In the simulation environment a new model for memristive devices will be used for the investigation of the complete radiation-hard system architecture using in-memory computing for fault detection.

The main focus of this proposal is to explore new technological and computational ideas. The radiation hard memory approach with a new non-volatile memory concept, so called RRAM, is the core of this approach. To successfully address this objective, we are also targeting the scope: highly innovative technology leading to improvements in performance and enabling emerging internet-of-space applications.

Further Contributors

Prof. Dietmar Fey

Nr.: FE 412/11-1

Department Informatik, Universität Erlangen

Prof. Amelie Hagelauer

Nr.: HA 7772/3-1

Lehrst. f. Mikro- und Nanosystemtechnik, Technische Universität München

Dr.-Ing. Marc Reichenbach

Nr.: RE 4182/2-1

Fachbereich Technische Informatik, Brandenburgisch-Technische Universität, Cottbus-Senftenberg

Prof. Christian Wenger

Nr.: WE 3594/19-1

IHP GmbH, Frankfurt/Oder