Amorphous Gallium-Oxide-Based Non-Filamentary Memristive Device with Highly Repeatable Multiple Resistance States

Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu

Wiley Advanced, 18 March 2025

DOI: 10.1002/aelm.202400765

Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks

Yongmin Wang, Kristoffer Schnieders, Vasileios Ntinas, Alon Ascoli, Felix Cüppers, Susanne Hoffmann-Eifert

IEEE Transactions on Nanotechnology ( Volume: 24), 24 February 2025

DOI: 10.1109/TNANO.2025.3545251

Distributed representations enable robust multi-timescale symbolic computation in neuromorphic hardware

Madison Cotteret, Hugh Greatorex, Alpha Renner, Junren Chen, Emre Neftci, Huaqiang Wu, Giacomo Indiveri, Martin Ziegler, Elisabetta Chicca

Madison Cotteret et al 2025 Neuromorph. Comput. Eng., 7 February 2025

DOI: 10.1088/2634-4386/ada851

Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors

Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva, Dennis Braun, Sofía Cruces, Jimin Lee, Sergej Pasko, Simonas Krotkus, Michael Heuken, Stephan Menzel, Max C. Lemme

arXiv:2501.16359 [cond-mat.mtrl-sci], 20 January 2025

DOI: 10.48550/arXiv.2501.16359

Memristive ternary Łukasiewicz logic based on reading-based ratioed resistive states (3R)

Feng Liu, Leon Brackmann, Xianyue Zhao, Nan Du, Rainer Waser, Stephan Menzel

Philosophical Transactions of the Royal Society, 16 January 2025

DOI: 10.1098/rsta.2023.0397

Stimuli-responsive gold–polyoxometalate multielectron transformers

Kirill Monakhov

Royal Society of Chemistry, 18 Dec 2024

DOI: 10.1039/D4QI02988G

Multistate switchable polyoxometalates as neuromimetic emulators

Marco Moors , Kirill Yu. Monakho

Materials Today, December 2024

DOI: 10.1016/j.mattod.2024.10.007

Modelling of Frequency Dependence in Self-Rectifying Analog BiFeO3 Memristors

Xianyue Zhao, Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Ilia Polian, Ronald Tetzlaff, Nan Du

31st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 18-20 November 2024

DOI: 10.1109/ICECS61496.2024.10848916

Implementation of a Multiclass Support Vector Machine on a Differential Memristor Crossbar

Amir Khan, Vasileios Ntinas, Jorge Fernandez-Berni, Ricardo Carmona-Galan, Ronald Tetzlafft

31st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 18-20 November 2024

DOI: 10.1109/ICECS61496.2024.10849043

On-chip READ and WRITE Circuits for Multi-bit Ferroelectric Tunnel Junction Memory

John Reuben, Suzanne Lancaster, Dietmar Fey, Stefan Slesazeck

2024 IEEE Nordic Circuits and Systems Conference (NorCAS),  29-30 October 2024

DOI: 10.1109/NorCAS64408.2024.10752485

Next Generation Memristor Reservoir Computing

Kristina Nikiruy, Tzvetan Ivanov, Martin Ziegler, David Rossetti, Fernando Corinto, Alon Ascoli, Ronald Tetzlaff, Ahmet Samil Demirkol, Nicolas Schmitt

IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE), 21-23 October 2024

DOI: 10.1109/MetroXRAINE62247.2024.10796786

Experimental Evidence for Local Fading Memory Effects in TaOx ReRAM Cells

Nicolas Schmitt, Ioannis Messaris, Ahmet Samil Demirkol, Vasileios Ntinas, Dimitris Prousalis, Ronald Tetzlaff

2024 IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE), 21-23 October 2024

DOI: 10.1109/MetroXRAINE62247.2024.10795989

A flexible and fast digital twin for RRAM systems applied for training resilient neural networks

Markus Fritscher, Simranjeet Singh, Tommaso Rizzi, Andrea Baroni, Daniel Reiser, Maen Mallah, David Hartmann, Ankit Bende, Tim Kempen, Max Uhlmann, Gerhard Kahmen, Dietmar Fey, Vikas Rana, Stephan Menzel, Marc Reichenbach, Milos Krstic, Farhad Merchant, Christian Wenger

Sci Rep 14, 23695 (2024), 10 October 2024

DOI: 10.1038/s41598-024-73439-z

Variability-aware modeling of electrochemical metallization memory cells

Kirill Yu. Monakhov, Christoph Meinecke, Marco Moors , Carolin Schmitz-Antoniak, Thomas Blaudeck, Julia Hann, Christopher Bickmann, Danny Reuter, Thomas Otto, Stefan E. Schulz, Harish Parala, Anjana Devi

De Gruyter Brill, 16 September 2024

DOI: 10.1515/pac-2024-0242

Variability-aware modeling of electrochemical metallization memory cells

Rana Walied Ahmad; Rainer Waser; Florian Maudet; Onur Toprak; Catherine Dubourdieu; Stephan Menzel

Neuromorph. Comput. Eng., 26 August 2024

DOI: 10.1088/2634-4386/ad57e7

Optimization of self-rectifying analog memristors by insertion of an interfacial layer

Xianyue Zhao; Kefeng Li; Ziang Chen; Andrea Dellith; Jan Dellith; Uwe Hübner; Christopher Bengel; Feng Liu; Stephan Menzel; Heidemarie Schmidt; Nan Du

Appl. Phys. Lett. 125, 083509 (2024), 21 August 2024

DOI: 10.1063/5.0213396

Area-Efficient Digital Design Using RRAM-CMOS Standard Cells

Markus Fritscher, Max Uhlmann, Philip Ostrovskyy, Daniel Reiser, Junchao Chen, Andreas Schubert

2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 01-03 July 2024

DOI: 10.1109/ISVLSI61997.2024.00026

Fault Impact Map for Memristive Crossbar Neural Networks

Richard Schroedter, Adnan Haidar, Ronald Tetzlaff

13th International Conference on Modern Circuits and Systems Technologies (MOCAST), 26-28 June 2024

DOI: 10.1109/MOCAST61810.2024.10615515

Resolving the Relaxation of Volatile Valence Change Memory

Johannes Hellwig, Carsten Funck, Sebastian Siegel, Alexandros Sarantopoulos, Dimitrios Spithouris, Stephan Menzel, Regina Dittmann

Advanced Electronic Materials, 17 June 2024

DOI: 10.1002/aelm.202400062

Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions

Xianyue Zhao; Jonas Ruchti; Christoph Frisch; Kefeng Li; Ziang Chen; Stephan Menzel; Rainer Waser; Heidemarie Schmidt; Ilia Polian; Michael Pehl; Nan Du

IEEE Transactions on Nanotechnology, 13 June 2024

DOI: 10.1109/TNANO.2024.3413888

Realization of Reading-based Ternary Łukasiewicz Logic using Memristive Devices

Feng Liu; Xianyue Zhao; Ziang Chen; Christopher Bengel; Nan Du; Stephan Menzel

2024 IEEE International Symposium on Circuits and Systems (ISCAS), Singapore, 19-22 May 2024

DOI: 10.1109/ISCAS58744.2024.10558534

Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli

Nicolas Schmitt, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Stephan Menzel, Vikas Rana, Ronald Tetzlaff, Leon O. Chua

Frontiers in Nanotechnology, 15 May 2024

DOI: 10.3389/fnano.2024.1301320

Understanding the Thermal Aspects in Dense RRAM Memory Arrays

Daniel Schön, Stephan Menzel

2024 IEEE International Memory Workshop (IMW), 12-15 May 2024

DOI: 10.1109/IMW59701.2024.10536969

Design and analysis of an adaptive radiation resilient RRAM subsystem for processing systems in satellites

Daniel Reiser, Junchao Chen, Johannes Knödtel, Andrea Baroni, Miloš Krstić, Marc Reichenbach

Design Automation for Embedded Systems, 10 April 2024

DOI: 10.1007/s10617-024-09285-z

Impact of laser energy density on engineering resistive switching dynamics in self-rectifying analog memristors based on BiFeO3 thin films

Xianyue Zhao; Kefeng Li; Ziang Chen; Jan Dellith; Andrea Dellith; Marco Diegel; Daniel Blaschke; Stephan Menzel; Ilia Polian; Heidemarie Schmidt; Nan Du

J. Appl. Phys. 135, 135303 (2024), 4 April 2024

DOI: 10.1063/5.0196718

Improved Arithmetic Performance by Combining Stateful and Non-Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars

Leon Brackmann, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan MenzelLeon Brackmann, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel

Wiley Advanced, 27 December 2023

DOI: 10.1002/aisy.202300579

LUT-based RRAM Model for Neural Accelerator Circuit Simulation

Max Uhlmann, Tommaso Rizzi, Jianan Wen, Emilio Pérez-Bosch Quesada, Bakr Al Beattie, Karlheinz Ochs, Eduardo Pérez, Philip Ostrovskyy, Corrado Carta, Christian Wenger, Gerhard Kahmen

18th ACM International Symposium on Nanoscale Architectures (NANOARCH), 18-20 December 2023

DOI: 10.1145/3611315.3633273

Modeling of a Nonvolatile Organic Memory Device with Memcapacitve Properties

Lautaro N. Petrauskas, R Anju Kumari, Bahman K. Boroujeni, Stefan C. B. Mannsfeld, Frank Ellinger

2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 04-07 December 2023

DOI: 10.1109/ICECS58634.2023.10382760

Realization of Ternary Lukasiewicz Logic using BiFeO3 based Memristive Devices

Feng Liu; Xianyue Zhao; Ziang Chen; Christopher Bengel; Nan Du; Stephan Menzel

30th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Istanbul, 4-7 December 2023

DOI: 10.1109/ICECS58634.2023.10382938

Potential Application of Organic Electronics in Electrical Sensing of Insects and Integrated Pest Management towards Developing Ecofriendly Replacements for Chemical Insecticides

Lautaro N. Petrauskas, Katherina Haase, Georg C. Schmidt, Arved C. Hübler, Stefan C. B. Mannsfeld, Frank Ellinger, Bahman Kheradmand Boroujeni

Wiley Advanced, 09 November 2023

DOI: 10.1002/advs.202304849

Ternary Łukasiewicz logic using memristive devices

Christopher Bengel; Feng Liu; Ziang Chen; Xianyue Zhao; Rainer Waser; Heidemarie Schmidt; Nan Du; Stephan Menzel

Neuromorphic Computing and Engineering, 11 October 2023

DOI: 10.1088/2634-4386/acfbf3

A Comparative Study of Passive and Active Mixer Circuits in a Flexible a-IGZO TFT Technology

Lautaro N. Petrauskas, Bahman Kheradmand-Boroujeni, Frank Ellinger

IEEE Journal on Flexible Electronics, 04 October 2023

DOI: 10.1109/JFLEX.2023.3322118

Vector Symbolic Finite State Machines in Attractor Neural Networks

Madison Cotteret, Hugh Greatorex, Martin Ziegler, Elisabetta Chicca

Neural Computation 36, 549–595 (2024), October 19 2023

DOI: 10.1162/neco_a_01638

Low Power 30 MHz D Flip-Flop in a Flexible a-IGZO Thin-Film Transistor Technology

Lautaro N. Petrauskas, Bahman K. Boroujeni, Frank Ellinger

2023 IEEE International Flexible Electronics Technology Conference (IFETC), 25 September 2023

DOI: 10.1109/IFETC57334.2023.10254875

Special Session – Non-Volatile Memories: Challenges and Opportunities for Embedded System Architectures with Focus on Machine Learning Applications

Jörg Henkel, Lokesh Siddhu, Lars Bauer, Jürgen Teich, Stefan Wildermann, Mehdi Tahoori, Mahta Mayahinia, Jeronimo Castrillon, Asif Ali Khan, Hamid Farzaneh, João Paulo C. de Lima, Jian-Jia Chen, Christian Hakert, Kuan-Hsun Chen, Chia-Lin Yang, Hsiang-Yun Cheng

Proceedings of the 2023 International Conference on Compilers, Architecture, and Synthesis of Embedded Systems (CASES), Sep 2023

DOI: tba

A Subthreshold Second-Order Integration Circuit for Versatile Synaptic Alpha Kernel and Trace Generation

Ole Richter, Hugh Greatorex, Benjamin Hucko, Madison Cotteret, Willian Soares Girao, Ella Janotte, Michele Mastella, Elisabetta Chicca

Synaptic Normalisation for On-Chip Learning in Analog CMOS Spiking Neural Networks. In International Conference on Neuromorphic Systems (ICONS ’23), August 1–3, 2023

DOI: 10.1145/3589737.3606008

Synaptic Normalisation for On-Chip Learning in Analog CMOS Spiking Neural Networks

Michele Mastella, Hugh Greatorex, Madison Cotteret, Ella Janotte, Willian Soares Girão, Ole Richter, Elisabetta Chicca.

Synaptic Normalisation for On-Chip Learning in Analog CMOS Spiking Neural Networks. In International Conference on Neuromorphic Systems (ICONS ’23), August 1–3, 2023

DOI: 10.1145/3589737.3606007

Multitasking and Memcomputing in Memristor Cellular Nonlinear Networks: Insights into the Underlying Mechanisms

Ioannis Messaris, Alon Ascoli, Dimitrios Prousalis, Vasileios Ntinas, Ahmet Samil Demirkol, Ronald Tetzlaff

19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 03-05 July 2023

DOI: 10.1109/SMACD58065.2023.10192210

A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation

Vasileios Ntinas; Dharmik Patel; Yongmin Wang; Ioannis Messaris; Vikas Rana; Stephan Menzel; Alon Ascoli; Ronald Tetzlaff

19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 03-05 July 2023

DOI: 10.1109/SMACD58065.2023.10192107

*** Best Paper Award on Emerging Technologies and Applications ***

Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Jülich

Nicolas Schmitt, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Vasileios Ntinas, Dimitrios Prousalis, Ronald Tetzlaff, Spyridon Nikolaidis, Stephan Menzel, Vikas Rana

12th International Conference on Modern Circuits and Systems Technologies (MOCAST), Athens, Greece, 28-30 June 2023

DOI: 10.1109/MOCAST57943.2023.10177018

A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories

John Reuben, Dietmar Fey, Stefan Slesazeck

12th International Conference on Modern Circuits and Systems Technologies (MOCAST), Athens, Greece, 28-30 June 2023

DOI: 10.1109/MOCAST57943.2023.10176774

A pseudo-memcapacitive neurotransistor for spiking neural networks

Richard Schroedter; Ahmet Samil Demirkol; Alon Ascoli; Benjamin Max; Florian Nebe; Thomas Mikolajick; Ronald Tetzlaff

12th International Conference on Modern Circuits and Systems Technologies (MOCAST), Athens, Greece, 28-30 June 2023

DOI: 10.1109/MOCAST57943.2023.10176398

Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Julich

N. Schmitt, A. Ascoli, I. Messaris, A.S. Demirkol, V. Ntinas, D. Prousalis, S. Nikolaidis, Ronald Tetzlaff, Stephan Menzel, Vikas Rana

12th International Conference on Modern Circuits and Systems Technologies (MOCAST), 28-30 June 2023

DOI: 10.1109/MOCAST57943.2023.10177018

Technology-Aware Drift Resilience Analysis of RRAM Crossbar Array Configurations

Daniel Reiser, Marc Reichenbach, Tommaso Rizzi, Andrea Baroni, Markus Fritscher, Christian Wenger, Cristian Zambelli, Davide Bertozzi

21st IEEE Interregional NEWCAS Conference (NEWCAS), 26-28 June 2023

DOI: 10.1109/NEWCAS57931.2023.10198076

A RRAM Characterization System with Flexible Readout Operations using an Integrating ADC

Ruolan Jia, Stefan Pechmann, Andrea Baroni, Christian Wenger, Amelie Hagelauer

18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023, Valencia, 18.-21 June 2023

DOI: 10.1109/PRIME58259.2023.10161880

Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing

Abhinav Vishwakarma, Markus Fritscher, Amelie Hagelauer, Marc Reichenbach

2023 14th Spanish Conference on Electron Devices (CDE), 06-08 June 2023

DOI:  10.1109/CDE58627.2023.10339525

An RRAM-based building block for reprogrammable non-uniform sampling ADCs

Abhinav Vishwakarma, Markus Fritscher, Amelie Hagelauer, Marc Reichenbach

it - Information Technology, Vol. 65, 1-2, pages 13–29, 04 May 2023

DOI: 10.1515/itit-2023-0021

Optimizing multi-level ReRAM memory for low latency and low energy consumption

Shima Hosseinzadeh, Marius Klemm, Georg Fischer, Dietmar Fey

IT - Information Technology, Volume 65, Issue 1-2, 03 May 2023

DOI: 10.1515/itit-2023-0022

Timing-accurate simulation framework for NVM-based compute-in-memory architecture exploration

Vincent Rietz; Christopher Münch, Mahta Mayahinia, Mehdi Tahoori

it - Information Technology, Vol. 65, 1-2, pages 13–29, 03 May 2023

DOI: 10.1515/itit-2023-0019

Memristive computing in Germany

Dietmar Fey

IT - Information TechnologyVolume 65, Issue 1-2, Pages 1 - 21, 21 April 2023

DOI: 10.1515/itit-2023-0017

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Xianyue Zhao; Stephan Menzel; Ilia Polian; Heidemarie Schmidt; Nan Du

Nanomaterials, 10 April 2023

DOI: 10.3390/nano13081325

Spatio-Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Daniel Schön, Stephan Menzel

Wiley Advanced, 28 February 2023

DOI: 10.1002/adfm.202213943

A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions

John Reuben; Dietmar Fey; Suzanne Lancaster; Stefan Slesazeck;

Electronics 2023, 12, 1163, 28 February 2023

DOI: 10.3390/electronics12051163

Reliability of Computing-In-Memory Concepts Based on Memristive Arrays

D. J. Wouters; L. Brackmann; A. Jafari; C. Bengel; M. Mayahinia; R. Waser; S. Menzel; M. Tahoori

2022 International Electron Devices Meeting (IEDM), 03-07 December 2022, San Francisco, CA, USA

DOI: 10.1109/IEDM45625.2022.10019423

An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

Eter Mgeladze; Melanie Herzig; Richard Schroedter; Ronald Tetzlaff; Thomas Mikolajick; Stefan Slesazeck

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 24-26 October 2022, Glasgow, United Kingdom

DOI: 10.1109/ICECS202256217.2022.9970915

Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs

Tommaso Rizzi; Andrea Baroni; Artem Glukhov; Davide Bertozzi; Christian Wenger; Daniele Ielmini; Cristian Zambelli

2022 IEEE International Integrated Reliability Workshop (IIRW), 09-14 October 2022, South Lake Tahoe, CA, USA

DOI: 10.1109/IIRW56459.2022.10032753

Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices

Ziang Chen; Guofu Zhang; Hao Cai; Christopher Bengel; Feng Liu; Xianyue Zhao; Shahar Kvatinsky; Heidemarie Schmidt; Rainer Waser; Stephan Menzel; Nan Du

Front. Electron. Mater, Sec. Semiconducting Materials and Devices, 04 October 2022

DOI: 10.3389/femat.2022.988785

A failure analysis framework of ReRAM In-Memory Logic operations

L. Brackmann; A. Jafari; C. Bengel; M. Mayahinia; R. Waser; D. Wouters; S. Menzel; M. Tahoori

2022 IEEE International Test Conference in Asia (ITC-Asia), 24-26 August 2022, Taipei, Taiwan

DOI: 10.1109/ITCAsia55616.2022.00022

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System-Theoretic Dynamic Route Map Analysis and Experimental Verification

Alon Ascoli; Stephan Menzel; Vikas Rana; Tim Kempen; Ioannis Messaris; Ahmet Samil Demirkol; Michael Schulten; Anne Siemon; Ronald Tetzlaff

11 August 2022

DOI: 10.1002/aelm.202200182

Reliability aspects of binary vector-matrix-multiplications using ReRAM devices

Christopher Bengel; Johannes Mohr; Stefan Wiefels; Abhairaj Singh; Anteneh Gebregiorgis; Rajendra Bishnoi; Said Hamdioui; Rainer Waser; Dirk Wouters; Stephan Menzel

Neuromorphic Computing and Engineering, 22 June 2022

DOI: 10.1088/2634-4386/ac6d04

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor

Richard Schroedter; Ahmet Samil Demirkol; Alon Ascoli; Ronald Tetzlaff; Eter Mgeladze; Melanie Herzig; Stefan Slesazeck; Thomas Mikolajick

2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST), 08-10 June 2022, Bremen, Germany

DOI: 10.1109/MOCAST54814.2022.9837726

*** Best Paper Award in Electronics ***

Realization of Memristor-aided Logic Gates with Analog Memristive Devices

Hao Cai; Ziang Chen; Xianyue Zhao; Christopher Bengel; Feng Liu; Heidemarie Schmidt; Stephan Menzel; Nan Du

2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST), 08-10 June 2022, Bremen, Germany

DOI: 10.1109/MOCAST54814.2022.9837637

Performance Analysis of Memristive-CNN based on a VCM Device Model

Yongmin Wang; Alon Ascoli; Ronald Tetzlaff; Vikas Rana; Stephan Menzel

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA

DOI: 10.1109/ISCAS48785.2022.9937918

Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device

Richard Schroedter; Eter Mgeladze; Melanie Herzig; Alon Ascoli; Stefan Slesazeck; Thomas Mikolajick; Ronald Tetzlaff

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA

DOI: 10.1109/ISCAS48785.2022.9937966

Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances

Rana Walied Ahmad; Dirk Wouters; Christopher Bengel; Rainer Waser; Stephan Menzel

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA

DOI: 10.1109/ISCAS48785.2022.9937570

Mitigating the Effects of RRAM Process Variation on the Accuracy of Artificial Neural Networks

Markus Fritscher; Johannes Knödtel; Maen Mallah; Stefan Pechmann; Emilio Perez-Bosch Quesada; Tommaso Rizzi; Christian Wenger & Marc Reichenbach

Embedded Computer Systems: Architectures, Modeling, and Simulation. SAMOS 2021. Lecture Notes in Computer Science, vol 13227, 27 April 2022

DOI: 10.1007/978-3-031-04580-6_27

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices

Vasileios Ntinas; Alon Ascoli; Ioannis Messaris; Yongmin Wang; Vikas Rana; Stephan Menzel; Ronald Tetzlaff

IEEE Transactions on Circuits and Systems II: Express Briefs (Volume: 69, Issue: 5), 17 March 2022

DOI: 10.1109/TCSII.2022.3160304

System Theory Enables a Deep Exploration of ReRAM Cells’ Switching Phenomena

A. Ascoli; R. Tetzlaff; S. Menzel; V. Rana

2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 28 November 2021 – 01 December 2021, Dubai, United Arab Emirates

DOI: 10.1109/ICECS53924.2021.9665611

Comparative study of usefulness of FeFET, FTJ and ReRAM technology for ternary arithmetic

Dietmar Fey; John Reuben; Stefan Slesazeck

2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 28 November 2021 – 01 December 2021, Dubai, United Arab Emirates

DOI: 10.1109/ICECS53924.2021.9665635