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Gemeinsame MemrisTec-Publikationen

Publikationen

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Xianyue Zhao; Stephan Menzel; Ilia Polian; Heidemarie Schmidt; Nan Du
Nanomaterials, 10 April 2023
DOI:10.3390/nano13081325

An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

Eter Mgeladze; Melanie Herzig; Richard Schroedter; Ronald Tetzlaff; Thomas Mikolajick; Stefan Slesazeck
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 24-26 October 2022, Glasgow, United Kingdom
DOI: 10.1109/ICECS202256217.2022.9970915

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor
Richard Schroedter; Ahmet Samil Demirkol; Alon Ascoli; Ronald Tetzlaff; Eter Mgeladze; Melanie Herzig; Stefan Slesazeck; Thomas Mikolajick
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST), 08-10 June 2022, Bremen, Germany
DOI:10.1109/MOCAST54814.2022.9837726

Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device
Richard Schroedter; Eter Mgeladze; Melanie Herzig; Alon Ascoli; Stefan Slesazeck; Thomas Mikolajick; Ronald Tetzlaff
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA
DOI: 10.1109/ISCAS48785.2022.9937966

Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs
Tommaso Rizzi; Andrea Baroni; Artem Glukhov; Davide Bertozzi; Christian Wenger; Daniele Ielmini; Cristian Zambelli
2022 IEEE International Integrated Reliability Workshop (IIRW), 09-14 October 2022, South Lake Tahoe, CA, USA
DOI: 10.1109/IIRW56459.2022.10032753

Mitigating the Effects of RRAM Process Variation on the Accuracy of Artificial Neural Networks
Markus Fritscher; Johannes Knödtel; Maen Mallah; Stefan Pechmann; Emilio Perez-Bosch Quesada; Tommaso Rizzi; Christian Wenger & Marc Reichenbach
Embedded Computer Systems: Architectures, Modeling, and Simulation. SAMOS 2021. Lecture Notes in Computer Science, vol 13227, 27 April 2022
DOI: 10.1007/978-3-031-04580-6_27

A failure analysis framework of ReRAM In-Memory Logic operations
L. Brackmann; A. Jafari; C. Bengel; M. Mayahinia; R. Waser; D. Wouters; S. Menzel; M. Tahoori
2022 IEEE International Test Conference in Asia (ITC-Asia), 24-26 August 2022, Taipei, Taiwan
DOI: 10.1109/ITCAsia55616.2022.00022

Reliability of Computing-In-Memory Concepts Based on Memristive Arrays
D. J. Wouters; L. Brackmann; A. Jafari; C. Bengel; M. Mayahinia; R. Waser; S. Menzel; M. Tahoori
2022 International Electron Devices Meeting (IEDM), 03-07 December 2022, San Francisco, CA, USA
DOI: 10.1109/IEDM45625.2022.10019423

Performance Analysis of Memristive-CNN based on a VCM Device Model
Yongmin Wang; Alon Ascoli; Ronald Tetzlaff; Vikas Rana; Stephan Menzel
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA
DOI: 10.1109/ISCAS48785.2022.9937918

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
Vasileios Ntinas; Alon Ascoli; Ioannis Messaris; Yongmin Wang; Vikas Rana; Stephan Menzel; Ronald Tetzlaff
IEEE Transactions on Circuits and Systems II: Express Briefs (Volume: 69, Issue: 5), 17 March 2022
DOI: 10.1109/TCSII.2022.3160304

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System-Theoretic Dynamic Route Map Analysis and Experimental Verification
Alon Ascoli, Stephan Menzel, Vikas Rana, Tim Kempen, Ioannis Messaris, Ahmet Samil Demirkol, Michael Schulten, Anne Siemon, Ronald Tetzlaff
11 August 2022
DOI: 10.1002/aelm.202200182

System Theory Enables a Deep Exploration of ReRAM Cells‘ Switching Phenomena
A. Ascoli; R. Tetzlaff; S. Menzel; V. Rana
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 28 November 2021 – 01 December 2021, Dubai, United Arab Emirates
DOI: 10.1109/ICECS53924.2021.9665611

A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions
John Reuben; Dietmar Fey; Suzanne Lancaster; Stefan Slesazeck;
Electronics 2023, 12, 1163, 28 February 2023
DOI: 10.3390/electronics12051163

Comparative study of usefulness of FeFET, FTJ and ReRAM technology for ternary arithmetic
Dietmar Fey; John Reuben; Stefan Slesazeck
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 28 November 2021 – 01 December 2021, Dubai, United Arab Emirates
DOI: 10.1109/ICECS53924.2021.9665635

Realization of Memristor-aided Logic Gates with Analog Memristive Devices
Hao Cai; Ziang Chen; Xianyue Zhao; Christopher Bengel; Feng Liu; Heidemarie Schmidt; Stephan Menzel; Nan Du
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST), 08-10 June 2022, Bremen, Germany
DOI: 10.1109/MOCAST54814.2022.9837637

Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances
Rana Walied Ahmad; Dirk Wouters; Christopher Bengel; Rainer Waser; Stephan Menzel
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 27 May 2022 – 01 June 2022, Austin, TX, USA
DOI: 10.1109/ISCAS48785.2022.9937570