The 3rd Workshop on Memristors in Barcelona, from 29-30 June 2026, was organized by the University of Barcelona and the workshop chairs were Prof. Dr. Albert Cirera and Prof. Dr. Blas Garrido.
Mar Puigibert from IHP – Leibniz Institute for High Performance Microelectronics presented part of the first year results of the project LEOMEM. In that, she studied how the Total Ionizing Dose effects, caused by the X-ray irradiation, affects the 1T1R arrays, which are radiation-hardened-by-design because the standard nMOS transistor has been replaced with an Enlosed Layout Transistor (ELT).
